2019年：
[1] D. Wu, J. Guo, J. Du, C. Xia, L. Zeng*, Y. Tian, Z. Shi, Y. Tian, X. J. Li, Y. H. Tsang* and J. Jie*, Highly Polarization-Sensitive, Broadband, Self-Powered Photodetector Based on Graphene/PdSe2/Germanium Heterojunction, ACS Nano, 2019, 13, 9907-9917. (ESI高被引论文)
[2] R. Zhuo, L. Zeng, H. Yuan, D. Wu*, Y. Wang, Z. Shi, T. Xu, Y. Tian, X. Li* and Y. H. Tsang*, In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity, Nano Research, 2019, 12, 183-189. (ESI高被引论文)
[3] E. Wu, D. Wu*, C. Jia, Y. Wang, H. Yuan, L. Zeng*, T. Xu, Z. Shi, Y. Tian and X. Li, In Situ Fabrication of 2D WS2/Si Type-II Heterojunction for Self-Powered Broadband Photodetector with Response up to Mid-Infrared, ACS Photonics, 2019, 6, 565-572. (ESI高被引论文)
[4] Z. Zhao, D. Wu*, J. Guo, E. Wu, C. Jia, Z. Shi, Y. Tian, X. Li and Y. Tian*, Synthesis of large-area 2D WS2 films and fabrication of a heterostructure for self-powered ultraviolet photodetection and imaging applications, J. Mater. Chem. C, 2019, 7, 12121-12126.
[5] C. Jia, D. Wu*, E. Wu, J. Guo, Z. Zhao, Z. Shi, T. Xu, X. Huang*, Y. Tian and X. Li, A self-powered high-performance photodetector based on a MoS2/GaAs heterojunction with high polarization sensitivity, J. Mater. Chem. C, 2019, 7, 3817-3821.
[6] J. Zhang, L. Zhang, P. Cai, X. Xue, M. Wang, J. Zhang*, G. Tu*, Enhancing Stability of Red Perovskite Nanocrystals through Copper Substitution for Efficient Light-emitting Diodes. Nano Energy 2019, 62, 434.
[7] J. Zhang, X. Liu, P. Jiang, H. Chen, Y. Wang, J. Ma, R. Zhang, F. Yang, M. Wang, J. Zhang*, G. Tu*, Red-emitting CsPbBrI2/PbSe Heterojunction Nanocrystals with High Luminescent Efficiency and Stability for Bright Light-emitting Diodes. Nano Energy 2019, 66, 104142.
[8] J. Zhang, L. Fan, J. Li, X. Liu, R. Wang, L. Wang, G. Tu*, Growth Mechanism of CsPbBr3 Perovskite Nanocrystals by a Co-precipitation Method in a CSTR System. Nano Res. 2019, 12, 121-127.
[9] Mochen Jia, Zhen Sun, Fang Lin, Bofei Hou, Xin Li, Mingxuan Zhang, Huayao Wang, Yang Xu and Zuoling Fu*. Prediction of Thermal-Coupled Thermometric Performance of Er3+. Journal of Physical Chemistry Letters, 2019, 10, 5786-5790.
[10] Sen Li, Zhifeng Shi*, Fei Zhang, Lintao Wang, Zhuangzhuang Ma, Dongwen Yang, Zhiqiang Yao, Di Wu, Tingting Xu, Yongtao Tian, Yuantao Zhang, Chongxin Shan, Xinjian Li*, Sodium doping-enhanced emission efficiency and stability of CsPbBr3 nanocrystals for white light-emitting devices, Chemistry of Materials, 2019, 31:3917-3928.
[11] Fei Zhang, Zhifeng Shi*, Sen Li, Zhuangzhuang Ma, Ying Li, Lintao Wang, Di Wu, Yongtao Tian, Guotong Du, Xinjian Li, Chongxin Shan, Synergetic effect of the surfactant and silica coating on the enhanced emission and stability of perovskite quantum dots for anticounterfeiting, ACS Applied Materials & Interfaces, 2019, 11:28013-28022.
[12] Sen Li, Ying Li, Zhifeng Shi*, Lingzhi Lei, Huifang Ji, Di Wu, Tingting Xu, Xinjian Li*, Guotong Du, Fabrication of morphology-controlled and highly-crystallized perovskite microwires for long-term stable photodetectors, Solar Energy Materials and Solar Cells, 2019, 191:275-232.
[13] Ying Li, Zhifeng Shi*, Lingzhi Lei, Sen Li, Dongwen Yang, Di Wu, Tingting Xu, Yongtao Tian, Yingjie Lu, Ye Wang, Lijun Zhang, Xinjian Li*, Yuantao Zhang, Guotong Du, Chongxin Shan, Ultrastable lead-free double perovskite photodetectors with imaging capability, Advanced Materials Interfaces, 2019, 6:1900188.
[14] Ying Li, Zhifeng Shi*, Xinjian Li, Chongxin Shan*, Photodetectors based on inorganic halide perovskites: Materials and devices, Chinese Physics B, 2019, 28:017803.
[15] Yang Zhao, Hui Wang*, Xinzhong Li, Jingjie Li, Zhifeng Shi*, Guoguang Wu, Shiwei Zhuang, Chuanlei Yin, Fan Yang, Parametric study on the well-oriented growth of InxAl1-xN nanodots by magnetron sputtering, Materials Science in Semiconductor Processing, 2019, 102:104583.
[16] Hui Wang, Yang Zhao*, Jingjie Li, Yijian Zhou, Zhifeng Shi*, Chuanlei Yin, Shiwei Zhuang, Fan Yang, Electrically pumped green lasing action from InGaN/GaN MQM heterojunction with a p-NiO cap layer, Materials Research Express, 2019, 6:095914.
