姓名：吴翟
职称：教授
学历：博士
邮箱：wudi1205@zzu.edu.cn
办公地点：郑州大学南校区23号楼
一、个人基本情况：
吴翟，教授，2013年博士毕业于合肥工业大学材料工程学院材料物理与化学专业。2014年赴香港大学化学系任咏华院士课题组从事博士后研究。2015年到郑州大学物理学院任教至今。近年来一直在从事低维纳米半导体光电材料与器件的研究，发表SCI论文230余篇，其中包含“ESI高被引论文”20篇，引用超14000余次，“H因子”为67；申请发明专利18项。先后主持了国家自然科学基金-面上项目、国家自然科学基金-河南联合基金,国家自然科学基-金青年项目，河南省自然科学基金杰出青年、优秀青年项目、中国博士后科学基金项目，河南省科技厅重点研发与推广专项和河南省高等学校重点科研项目等科研项目十余项，荣获河南省高层次人才特殊支持“中原青年拔尖人才”、河南省教育厅学术技术带头人、纳米研究青年科学家、全球前2%顶尖科学家奖等荣誉和称号。目前兼任Nano Research、Materials Futures青年编委，担任Nature Communications、Advanced Materials、Nano letters等40余种期刊审稿专家。
招收凝聚态物理和仪器仪表工程专业硕士、博士研究生，欢迎报考！
二、研究方向：
主要从事低维半导体纳米结构的制备、表征及应用研究，以及相应新型微纳器件的设计、制备、性能的研究工作，探索纳米材料在新型电子、光电子器件的应用，包括：新型二维纳米半导体材料及其光电器件：新型二维材料的大面积制备，探索其在高性能紫外和红外光电探测与成像中的应用。
三、指导学生获奖情况：
截止2022年，指导研究生获得河南省优秀硕士学位论文4人次、研究生国家奖学金5人次、河南省优秀应届毕业研究生4人次、郑州大学优秀应届毕业研究生5人次、郑州大学三好研究生4人次。指导学生获得郑州大学首届（2020年度）“研究生优秀学位论文嵩山奖”。
四、个人荣誉：
(1) 2024年，全球前2%顶尖科学家（美国斯坦福大学）
(2) 2023年，河南省高校青年骨干教师
(3) 2022年，纳米研究顶级论文奖 Nano Research“Top Papers Award”
(4) 2022年，河南省教育厅科技论文一等奖，第一
(5) 2021年，河南省教育厅科技论文一等奖，第一
(6) 2021年，河南省教育厅科技成果一等奖，2/5
(7) 2021年，纳米研究顶级论文奖 Nano Research“Top Papers Award”
(8) 2021年，河南省高层次人才特殊支持“中原青年拔尖人才”
(9) 2021年，纳米研究青年科学家奖
(10) 2020年，河南省教育厅学术技术带头人
(11) 2019年，郑州大学“三育人”先进个人
(12) 2018年，郑州大学首批“青年拔尖人才”
(13) 2017-2019年，河南省优秀硕士论文指导教师
(14) 2019年，AIP Best Speaker Award
(15) 2020年，China Top Cited Paper Award
(16) 2018年，郑州大学青年骨干教师
五、科研成果：
先后主持了国家自然科学基金-面上项目、国家自然科学基金-河南联合基金,国家自然科学基金青年项目，河南省自然科学基金杰出青年、优秀青年项目,中国博士后科学基金项目，河南省科技厅重点研发与推广专项和河南省高等学校重点科研项目等科研项目。在Advanced Materials, Light: Science & Applications,Journal of the American Chemical Society, Nano Letters, ACS Nano等国际期刊上已发表SCI学术论文230余篇，“ESI高被引论文”20篇，引用超14000余次，H因子为67；申请发明专利18项，包含美国专利1项。
1. 主持的科研项目：
(1) 主持：国家自然科学基金-河南联合基金，50万元(2021.01-2023.12)
(2) 主持：河南省高层次人才特殊支持“中原青年拔尖人才”项目，50万元（2022.01-2024.12）
(3) 主持：河南省自然科学基金-优秀青年项目，25万元(2020.01-2022.12)
(4) 主持：郑州大学物理学科推进计划，60万元 (2019.01-2021.12)
(5) 主持：郑州大学青年教师基础研究培育基金，20万元（2020.8-2021.12）
(6) 主持：国家自然科学基金-青年项目，19万元 (2017.01-2019.12)
(7) 主持：中国博士后科学基金，5万元 (面上项目；2015.09-2017.06)
(8) 主持：河南省科技厅重点研发与推广专项 (2018.01-2020.12)
(9) 主持：河南省高等学校重点科研项目，5万元 (2017.01-2018.12)
(10) 主持：汉威科技集团股份有限公司横向项目，100万元（2022.03-2023.12）
(11) 主持：国家自然科学基金-面上项目，55万元(2024.01-2027.12)
(12)主持：河南省自然科学基金-杰出青年项目，50万元(2025.01-2027.12)
2. 近年来发表的部分SCI论文：
[1] X. Li, K. Liu, D. Wu*, P. Lin, Z. Shi, X. Li, L. Zeng*, Y. Chai, S. P. Lau, Y. H. Tsang*, Van Der Waals Hybrid Integration of 2D Semimetals for Broadband Photodetection, Advanced Materials, 2025, DOI: 10.1002/adma.202415717.
[2] D. Shi, J. Chen, M. Zhu, Z. Guo, Z. He, M. Li, D. Wu*, Y. Wang*, L. Li*, Computing imaging in shortwave infrared bands enabled by MoTe2/Si 2D‐3D heterojunction‐based photodiode, InfoMat, 2024, 6(12): e12618.（封面文章）
[3] D. Wu, Z. Mo, X. Li, X. Ren, Z. Shi, X. Li, L. Zhang*, X. Yu, H. Peng, L. Zeng*, C.-X. Shan*, Integrated mid-infrared sensing and ultrashort lasers based on wafer-level Td-WTe2 Weyl semimetal, Applied Physics Reviews, 2024, 11(4): 041401.
[4] X. Cao, K. Liu, D. Wu*, Z. Zhou, P. Lin, R. Zhuo, Z. Shi, X. Hu*, L. Zeng, X. Li, Highly sensitive full solar-blind ultraviolet spectrum detection and imaging based on PdSe2/Ga2O3 vdW heterojunction, Optics Letters, 2024, 49(18): 5324.
[5] X. Li, K. Liu, R. Zhuo, L. Zeng, P. Lin*, L. Li, Z. Shi, Y. Tian, X. Li, D. Wu*, Mixed-Dimensional PtSe2/Bi2Te3/Pyramid Si Heterojunction with a Light-Trapping Structure for Highly Sensitive Ultrabroadband Photodetection, ACS Photonics, 2024, 11(5): 2070.
[6] Z. Zhou, K. Liu, D. Wu*, Y. Jiang, R. Zhuo, P. Lin, Z. Shi, Y. Tian, W. Han*, L. Zeng, X. Li, On-chip integrated GeSe2/Si vdW heterojunction for ultraviolet-enhanced broadband photodetection, imaging, and secure optical communication, Nano Research, 2024, 17(7): 6544.
[7] M. Zhu, K. Liu, D. Wu*, Y. Jiang, X. Li, P. Lin, Z. Shi, X. Li, R. Ding, Y. Tang, X. Yu, L. Zeng*, In-situ fabrication of on-chip 1T’-MoTe2/Ge Schottky junction photodetector for self-powered broadband infrared imaging and position sensing, Nano Research, 2024, 17(6): 5587.
[8] X. Li, S. E. Wu, D. Wu*, T. Zhao, P. Lin, Z. Shi, Y. Tian, X. Li, L. Zeng, X. Yu*, In situ construction of PtSe2/Ge Schottky junction array with interface passivation for broadband infrared photodetection and imaging, InfoMat, 2024, 6(4): e12499. （封面文章）
[9] L. Zeng, W. Han, X. Ren, X. Li, D. Wu*, S. Liu, H. Wang, S. P. Lau, Y. H. Tsang, C.-X. Shan*, J. Jie*, Uncooled Mid-Infrared Sensing Enabled by Chip-Integrated Low-Temperature-Grown 2D PdTe2 Dirac Semimetal, Nano Letters, 2023, 23(17): 8241-8248. (ESI高被引论文)
[10] Y. P. Wu, S. E. Wu, J. J. Hei, L. H. Zeng, P. Lin, Z. F. Shi, Q. M. Chen, X. J. Li, X. C. Yu, D. Wu*, Van der Waals integration inch-scale 2D MoSe2 layers on Si for highly-sensitive broadband photodetection and imaging, Nano Research, 2023, 16(8): 11422.
[11] S. Pan, S.-E. Wu, J. Hei, Z. Zhou, L. Zeng*, Y. Xing, P. Lin*, Z. Shi, Y. Tian, X. Li, D. Wu*, Light trapping enhanced broadband photodetection and imaging based on MoSe2/pyramid Si vdW heterojunction, Nano Research, 2023, 16(7): 10552.（封面文章）
[12] J. Hei, X. Li, S. Wu, P. Lin, Z. Shi, Y. Tian, X. Li, L. Zeng, X. Yu*, D. Wu*, Wafer-Scale Patterning Synthesis of Two-Dimensional WSe2 Layers by Direct Selenization for Highly Sensitive van der Waals Heterojunction Broadband Photodetectors, ACS Appl. Mater. Interfaces 2023, 15, 12052-12060.
[13] D. Wu, C. Guo, L. Zeng*, X. Ren, Z. Shi, L. Wen, Q. Chen, M. Zhang, X. J. Li*, C.-X. Shan, J. Jie*, Phase-controlled van der Waals growth of wafer-scale 2D MoTe2 layers for integrated high-sensitivity broadband infrared photodetection, Light: Science & Applications, 2023, 12(1): 5. (热点论文、ESI高被引论文)
[14] D. Wu, R. Tian, P. Lin*, Z. Shi, X. Chen, M. Jia, Y. Tian, X. Li, L. Zeng*, J. Jie, Wafer-scale synthesis of wide bandgap 2D GeSe2 layers for self-powered ultrasensitive UV photodetection and imaging, Nano Energy, 2022, 104, 107972.
[15] L. Zeng, W. Han, S.-E. Wu, D. Wu*, S. P. Lau, Y. H. Tsang, Graphene/PtSe2/Pyramid Si Van Der Waals Schottky Junction for Room-Temperature Broadband Infrared Light Detection, IEEE Trans. Electron Devices, 2022, 69(11): 6212.
[16] X. Zhang, J. Shao, Y. Su, L. Wang, Y. Wang, X. Wang, D. Wu*, In-situ prepared WSe2/Si 2D-3D vertical heterojunction for high performance self-driven photodetector. Ceramics International, 2022, 48 (20), 29722-29729.
[17] D. Wu, M. Xu, L. Zeng, Z. Shi, Y. Tian, X. J. Li, C. X. Shan, J. Jie, In Situ Fabrication of PdSe2/GaN Schottky Junction for Polarization-Sensitive Ultraviolet Photodetection with High Dichroic Ratio, ACS Nano, 2022, 16(4): 5545-5555. (ESI高被引论文)
[18] D. Wu, Z. Mo, Y. Han, P. Lin, Z. Shi, X. Chen, Y. Tian, X. J. Li, H. Yuan, Y. H. Tsang, Fabrication of 2D PdSe2/3D CdTe Mixed-Dimensional van der Waals Heterojunction for Broadband Infrared Detection. ACS Appl. Mater. Interfaces 2021, 13 (35), 41791-41801.
[19] D. Wu, C. Guo, Z. Wang, X. Ren, Y. Tian, Z. Shi, P. Lin, Y. Tian, Y. Chen and X. Li, A defect-induced broadband photodetector based on WS2/pyramid Si 2D/3D mixed-dimensional heterojunction with a light confinement effect. Nanoscale 2021, 13 (31), 13550-13557.
[20] D. Wu, J. Guo, C. Wang, X. Ren, Y. Chen, P. Lin, L. Zeng*, Z. Shi, X. J. Li*, C. X. Shan and J. Jie*, Ultrabroadband and High-Detectivity Photodetector Based on WS2/Ge Heterojunction through Defect Engineering and Interface Passivation. ACS Nano 2021, 15 (6), 10119-10129. (ESI高被引论文)
[21] D. Wu, Z. Zhao, W. Lu, L. Rogée, L. Zeng, P. Lin, Z. Shi, Y. Tian, X. Li, Y. H. Tsang, Highly sensitive solar-blind deep ultraviolet photodetector based on graphene/PtSe2/β-Ga2O3 2D/3D Schottky junction with ultrafast speed, Nano Research. 2021, 14, 1973-1979. (ESI高被引论文)
[22] Z. Wang, X. Zhang, D. Wu*, J. Guo, Z. Zhao, Z. Shi, Y. Tian, X. Huang* and X. Li, Construction of mixed-dimensional WS2/Si heterojunctions for high-performance infrared photodetection and imaging applications, J. Mater. Chem. C, 2020, 8(20): 6877-6882.
[23] C. Jia, X. Huang, D. Wu*, Y. Tian, J. Guo, Z. Zhao, Z. Shi, Y. Tian, J. Jie and X. Li*, An ultrasensitive self-driven broadband photodetector based on a 2D-WS2/GaAs type-II Zener heterojunction, Nanoscale, 2020, 12 (7): 4435-4444.
[24] Di Wu, Cheng Jia, Fenghua Shi, Longhui Zeng,* Pei Lin, Lin Dong, Zhifeng Shi, Yongtao Tian, Xinjian Li, and Jiansheng Jie*, Mixed-dimensional PdSe2/SiNWA heterostructure based photovoltaic detectors for self-driven, broadband photodetection, infrared imaging and humidity sensing, J. Mater. Chem. A, 2020, 8, 3632-3642. (ESI高被引论文)
[25] D. Wu, J. Guo, J. Du, C. Xia, L. Zeng*, Y. Tian, Z. Shi, Y. Tian, X. J. Li, Y. H. Tsang* and J. Jie*, Highly Polarization-Sensitive, Broadband, Self-Powered Photodetector Based on Graphene/PdSe2/Germanium Heterojunction, ACS Nano, 2019, 13, 9907-9917. (ESI高被引论文)
[26] R. Zhuo, L. Zeng, H. Yuan, D. Wu*, Y. Wang, Z. Shi, T. Xu, Y. Tian, X. Li* and Y. H. Tsang*, In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity, Nano Research, 2019, 12, 183-189. (ESI高被引论文)
[27] E. Wu, D. Wu*, C. Jia, Y. Wang, H. Yuan, L. Zeng*, T. Xu, Z. Shi, Y. Tian and X. Li, In Situ Fabrication of 2D WS2/Si Type-II Heterojunction for Self-Powered Broadband Photodetector with Response up to Mid-Infrared, ACS Photonics, 2019, 6, 565-572. (ESI高被引论文)
[28] Z. Zhao, D. Wu*, J. Guo, E. Wu, C. Jia, Z. Shi, Y. Tian, X. Li and Y. Tian*, Synthesis of large-area 2D WS2 films and fabrication of a heterostructure for self-powered ultraviolet photodetection and imaging applications, J. Mater. Chem. C, 2019, 7, 12121-12126.
[29] C. Jia, D. Wu*, E. Wu, J. Guo, Z. Zhao, Z. Shi, T. Xu, X. Huang*, Y. Tian and X. Li, A self-powered high-performance photodetector based on a MoS2/GaAs heterojunction with high polarization sensitivity, J. Mater. Chem. C, 2019, 7, 3817-3821.
[30] D. Wu, Y. Wang, L. Zeng*, C. Jia, E. Wu, T. Xu, Z. Shi, Y. Tian, X. Li, Y. H. Tsang*, Design of 2D layered PtSe2 heterojunction for the high-performance room-temperature broadband infrared photodetector. ACS Photonics, 2018, 5, 3820-3827. (ESI高被引论文)
[31] Longhui Zeng, Shenghuang Lin, Zhenhua Lou, Huiyu Yuan, Hui Long, Yanyong Li, Wei Lu, Shu Ping Lau, Di Wu,* Yuen Hong Tsang*, Ultrafast and Sensitive Photodetector Based on PtSe2/Silicon Nanowire Array Heterojunction with Multiband Spectral Response from 200 to 1550 nm, NPG Asia Materials, 2018, 10, 352-362. (ESI高被引论文)
[32] R. Zhuo, D. Wu*, Y. Wang, E. Wu, C. Jia, Z. Shi, T. Xu, Y. Tian and X. Li*, A self-powered solar-blind photodetector based on a MoS2/β-Ga2O3 heterojunction, J. Mater. Chem. C, 2018, 6, 10982-10986.
[33] L. Z. Lei, Z. F. Shi, Y. Li, Z. Z. Ma, F. Zhang, T. T. Xu, Y. T. Tian, D. Wu*, X. J. Li and G. T. Du, High-efficiency and air-stable photodetectors based on lead-free double perovskite Cs2AgBiBr6 thin films, J. Mater. Chem. C, 2018, 6, 7982-7988.
[34] Yuange Wang, Xiaowen Huang, Di Wu,* Ranran Zhuo, Enping Wu, Cheng Jia, Zhifeng Shi, Tingting Xu,* Yongtao Tian and Xinjian Li, A room-temperature near-infrared photodetector based on a MoS2/CdTe p–n heterojunction with a broadband response up to 1700 nm, J. Mater. Chem. C, 2018, 6, 4861-4865.
[35] D. Wu, Z. Lou, Y. Wang, Z. Yao, T. Xu, Z. Shi, J. Xu, Y. Tian, X. Li* and Y. H. Tsang*, Photovoltaic high-performance broadband photodetector based on MoS2/Si nanowire array heterojunction, Solar Energy Materials and Solar Cells, 2018, 182, 272-280.
[36] R. Zhuo, Y. Wang, D. Wu*, Z. Lou, Z. Shi, T. Xu, J. Xu, Y. Tian and X. Li*, High-performance self-powered deep ultraviolet photodetector based on MoS2/GaN p–n heterojunction, J. Mater. Chem. C, 2018, 6, 299-303.
[37] T. Xu*, Y. Liu, Y. Pei, Y. Chen, Z. Jiang, Z. Shi, J. Xu, D. Wu*, Y. Tian and X. Li, The ultra-high NO2 response of ultra-thin WS2 nanosheets synthesized by hydrothermal and calcination processes, Sensors and Actuators B: Chemical, 2018, 259, 789-796.
[38] D. Wu, Z. Lou, Y. Wang, T. Xu*, Z. Shi, J. Xu, Y. Tian and X. Li*, Construction of MoS2/Si nanowire array heterojunction for ultrahigh-sensitivity gas sensor, Nanotechnology, 2017, 28, 435503.
[39] Z. Lou, L. Zeng, Y. Wang, D. Wu*, T. Xu, Z. Shi, Y. Tian, X. Li and Y. H. Tsang*, High-performance MoS2/Si heterojunction broadband photodetectors from deep ultraviolet to near infrared, Optics Letters, 2017, 42, 3335.
[40] Z. Lou, D. Wu*, K. Bu, T. Xu, Z. Shi, J. Xu, Y. Tian and X. Li, Dual-mode high-sensitivity humidity sensor based on MoS2/Si nanowires array heterojunction, Journal of Alloys and Compounds, 2017, 726, 632-637.
[41] D. Wu*, T. T. Xu, Z. F. Shi, Y. T. Tian, X. J. Li, Y. Q. Yu and Y. Jiang, Two-terminal nonvolatile resistive switching memory devices based on n-CdSe NR/p-Si heterojunctions, Journal of Alloys and Compounds, 2017, 695, 1653-1657.
[42] D. Wu*, Y. Chang, Z. Lou, T. Xu, J. Xu, Z. Shi, Y. Tian and X. Li, Controllable synthesis of ternary ZnSxSe1-x nanowires with tunable band-gaps for optoelectronic applications, Journal of Alloys and Compounds, 2017, 708, 623-627.
[43] Y. Chang, D. Wu*, T. Xu, Z. Shi, Y. Tian and X. Li, Fabrication of p-type ZnTe NW/In Schottky diodes for high-speed photodetectors, Journal of Materials Science-Materials in Electronics, 2017, 28, 1720-1725.
[44] D. Wu*, T. Xu, Z. Shi, Y. Tian and X. Li, Construction of ZnTe nanowires/Si p–n heterojunctions for electronic and optoelectronic applications, Journal of Alloys and Compounds, 2016, 661, 231-236.
[45] D. Wu*, Z. Shi, T. Xu, Y. Tian and X. Li, Gate-controllable photoresponse of nitrogen-doped p-type ZnSe nanoribbons top-gate FETs, Materials Letters, 2016, 164, 84-88.
[46] V. K. Au#, D. Wu# and V. W. Yam, Organic Memory Devices Based on a Bis-Cyclometalated Alkynylgold(III) Complex, J. Am. Chem. Soc., 2015, 137, 4654-4657.
[47] Di Wu, Yang Jiang*, Xudong Yao, Yajing Chang, Yugang Zhang, Yongqiang Yu, Zhifeng Zhu, Yan Zhang, Xinzheng Lan, Honghai Zhong, Construction of crossed heterojunctions from p-ZnTe and n-CdSe nanoribbons and their photoresponse properties, Journal of Materials Chemistry C, 2014, 2(32), 6547-6553.
[48] Di Wu, Yang Jiang*, Yongqiang Yu, Yugang Zhang, Guohua Li, Zhifeng Zhu, Chunyan Wu, Li Wang, Linbao Luo, Jiansheng Jie*, Nonvolatile multibit Schottky memory based on single n-type Ga doped CdSe nanowires, Nanotechnology, 2012, 23(48), 485203.
[49] Di Wu, Yang Jiang*, Yugang Zhang, Yongqiang Yu, Zhifeng Zhu, Xinzheng Lan, Fangze Li, Chunyan Wu, Li Wang, Linbao Luo*, Self-powered and fast-speed photodetectors based on CdS:Ga nanoribbon/Au Schottky diodes, Journal of Materials Chemistry, 2012, 22(43), 23272-23276.
[50] Di Wu, Yang Jiang*, Yugang Zhang, Junwei Li, Yongqiang Yu, Yuping Zhang, Zhifeng Zhu, Li Wang, Chunyan Wu, Linbao Luo, Jiansheng Jie*, Device structure-dependent field-effect and photoresponse performances of p-type ZnTe:Sb nanoribbons, Journal of Materials Chemistry, 2012, 22(13), 6206-6212.
[51] Di Wu, Yang Jiang*, Shanying Li, Fangze Li, Junwei Li, Xinzheng Lan, Yugang Zhang, Chunyan Wu, Linbao Luo, Jiansheng Jie*, Construction of high-quality CdS:Ga nanoribbon/silicon heterojunctions and their nano-optoelectronic applications, Nanotechnology, 2011, 22(40), 405201.
[52] Di Wu, Yang Jiang*, Li Wang, Shanying Li, Bo Wu, Xinzheng Lan, Yongqiang Yu, Chunyan Wu, Zhuangbing Wang, Jiansheng Jie*, High-performance CdS:P nanoribbon field-effect transistors constructed with high-kappa dielectric and top-gate geometry, Applied Physics Letters, 2010, 96(12), 123118.
3. 发明专利：
[1] 一种快速减薄单元素碲烯二维材料的制备方法，CN202110546743.9
[2] 一种二维二硒化钯纳米薄膜在宽波段偏振光信号检测中的应用，CN201910247192.9
[3] 基于二维二硒化铂纳米薄膜与碲化镉晶体的异质结型近红外光电探测器及其制备方法，CN201811336880.4
[4] 基于二维二硒化钯纳米薄膜与锗的自驱动异质结型红外光电探测器及其制备方法，ZL201811336879.1
[5] 基于二维二硫化钼纳米薄膜与碲化镉晶体的II型异质结型近红外光电探测器及其制备方法，CN201811336892.7
[6] 一种双模湿度传感器及其制备方法，ZL201710375959.7
[7] 一种异质结型光电探测器及其制备方法，ZL201210081208.1
[8] 基于硒化镉纳米线肖特基结型多字节非挥发性存储器及其制备方法，ZL201210077102.4
[9] Solution-processable donor-acceptor compounds containing boron (iii) moieties for the fabrication of optical reflectors and organic memory devices and their preparation thereof，US20160343943 A1（美国专利）
[10] 以Ni(Mg)O作为空穴提供层的钙钛矿绿光LED及制备方法 CN201610219503.7
[11] 以ZnO纳米墙网络作为电子注入层的钙钛矿LED及制备方法 CN201610220011.X
